Azerbaijan National Academy of Science

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Salmanov Famin Tahir oglu
Place of birth Astara, village Shiyakeran
Date of birth 12.02.1979
Education Baku State University
Scientific degree PhD in physics
Title Associate professor
Topic of  PhD thesis:

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Radiation Materials Science

g-rays influence on the electrical and dielectric properties of the compounds TlİnS2 (V)
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Basic scientific achievements On the basis of studying the instability temperature gratings type compounds A3B6 and A3B3C62, established the presence of phase transitions and comprehensively investigated.

The first time, it was found that the phase transitions are observed with temperature fields structure incommensurate. This allows to receive full information about the properties studied the lattice dynamics.

The studies determined that under certain conditions, layered crystals and chain structures behave as a low-dimensional system.

Thus, these compounds are observed in these properties: the temperature dependence of relaxor type; negative values of the dielectric coefficient; spector energy peculiar to quantum dots; extreme mesoscopic structures.

Names of scientific works 1. Relaxor properties and conductivity mechanism of γ-radiated TlInS2 crystals. FTT, Solid State Physics (Physica Tverdovo Tela), 2005, v.47, N.9, p.1665-1669.

2. “Specific Features of Conductivity of γ–Irradiated TlGaTe2 Crystals with Nanochain Structure” Semiconductors 44, 485 (2010).

3. Гигантская диэлектрическая релаксация в кристаллах TlGaTe2. Физика твердого тела. 2011, том. 53, вып. 8, с. 1488-1492.

4. Superionic Conductivity in One-Dimensional Nanofibrous TlGaTe2 Crystals. Japanese Journal of Applied Physics. 50 (2011), 05FC09-1 – 2.

5. Суперионная проводимость, эффекты переключения и памяти в кристаллах TlInSe2 и lInTe2.Физика и техника полупроводников. 2011, том 45, вып. 11, с. 1441-1445.

6. Суперионная проводимость в кристаллах TlGaTe2. Физика и техника полупроводников. 2011, том 45, вып. 8, с. 1009-1013.

7. “Ionic conductivity and dielectric relaxation in γ - irradiated TlGaTe2 crystals”. FTP, (Physica i Technica Poluprovodnicov), Semiconductors 47, No.5, 696-701 (2013).

8..Conductivity over localized states of the system of (TlInSe2)1–x(TlGaTe2)x solid solutions, Semiconductors 49 (12), 1655-1660

9. On the polarization caused by bulk charges and the ionic conductivity in TlInSe2 crystals, March 2014, Semiconductors 48(4)

10. Phase Transition in TlS, TlSe and TlInS2 Crystals Caused by Nanoscale Defects, August 2017 DOI10.11159/tann17.116 Conference: International Conference of Theoretical and Applied Nanoscience and Nanotechnology

11. Phase Transition in TlS, TlSe and TlInS2 Crystals Caused by Nanoscale Defects, January 2018, DOI10.11159/ijtan.2018.002

Membership with international and foreign scientific organizations "Eurodoc" (European Council of Young Scientists) 
Pedagogical activity  
Other activities Chairman of the Council of Young Scientists  and Specialists of ANAS.
Awards and prizes "Youth Award" laureate (2012)
Main place of work and its address Institute of Radiation Problems of ANAS, AZ1143, B.Vahabzadeh 9, Baku, Azerbaijan
Position Leading Researcher
Office phone (+994 12) 5392579 
Mobile (+994 50) 4528196
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