Place of birth | Marneuli, Georgia | ![]() |
Date of birth | 20.01.1941 | |
Education | Azerbaijan Pedagogical University | |
Scientific degree | Doctor of Physical and Mathematical Sciences | |
Title | Professor | |
Topic of PhD thesis:
- specialty code - specialty name - topic name |
01.049 Physics of Semiconductors and Dielectrics Electron diffraction study of the kinetics of phase transformations and structures of some phases of the silver-selenium system |
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Topic of doctoral thesis:
- specialty code - specialty name - topic name |
01.04.10 Physics of Semiconductors and Dielectrics Structure and physical properties of narrow-gap chalcogenide A1B6 and A4B6 in thin layers |
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Total number of printed scientific publications:
- number of scientific publications printed abroad: - number of papers published in journals indexed and abstracted in international databases |
201
120 23 |
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Number of patents and certificates of authorship | 4 | |
Staff training:
- number of PhD - number of Doctor of sciences |
12 1 |
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Basic scientific achievements | Under his leadership, it was established a research laboratory with production, in order to obtain epitaxial films of narrow-gap semiconductors A4B6 group and ceramic materials based on oxides Al2O3 is widely used in engineering. The laboratory is equipped with modern equipment and devices (electron diffractometer , electron microscope, X-ray spectrometer, Auger – spectrometer, vacuum evaporation, High-temperature furnaces , etc.) and engaged with the applied work. For obtaining of structurally perfect epitaxial films, scientific principles were developed in the laboratory and successfully applied "Condensation of molecular beams" and "hot wall" methods. It was obtained structurally perfect epitaxial films of A4B6 group compounds and solid solutions, created p-n homo- and heterotransitions on their base, obtained and used photosensitive elements and structures in the 3 ¸ 5 ; 8¸14 mcm range of IR spectrum. Ceramic materials of Al2O3 oxides were obtained, designed, manufactured and used metal - ceramic products for different purposes based on them. Carried out joint work with research laboratories of the former Soviet Union institutions. These relationships continue for today. It has been created comprehensive conditions in laboratory for research works and highly trained personnel. These specialists are successfully working in various institutions of Azerbaijan National Academy of Sciences - in universities of Ministry of Education of the Azerbaijan Republic. | |
Names of scientific works | 1. Нуриев И.Р., Фарзалиев С.С., Садыгов Р.М. Рост эпитаксиальных пле¬нок Pb1-xMnxTe(Ga) на монокристаллах PbTe1-xSex// Поверхность, 2004, №1, с.113-115.
2. Нуриев И.Р., Садыгов Р.М., Назаров А.М. Рост и структура фоточувствительныхэпитаксиальных пленок Pb1-xMnxTe (Ga) // Кристаллография, 2008, т.53, №2, с.329-331. 3. Нуриев И.Р. Структура и особенности морфологии поверхности эпитаксиальных пленок халькогенидов А4В6// Кристаллография, 2009, т.54, №7, c. 1228-1229. 4. Нуриев И.Р., Фараджев Н.В., Назаров А.М. Структура и фоточувствительные гомопереходы эпитаксиальных пленок Pb1-xSnxSe // Кристаллография, 2012, т.57, №2, c. 345-347. 5. Нуриев И.Р., Назаров А.М., Садыгов Р.М., Гаджиев М.Б. Изопериодические эпитаксиальные гетеропереходы Pb1–хMnхSe/PbSe1–хSх// Неорганические материалы, 2014, том 50, №5, c.482-485 |
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Membership with international and foreign scientific organizations | Member of the Council of doctoral defense at the Institute of Radiation Problems of ANAS |
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Pedagogical activity | He taught at the Azerbaijan Technical University | |
Other activities | Engaged in poetry. Author of 3 books of poems. | |
Awards and prizes | Honorary Diploma of ANAS | |
Main place of work and its address | Institute of Physics of ANAS, AZ1143, Baku, H.Javid avn., 131 | |
Position | Head of laboratory | |
Office phone | (+994 12) 4324704 | |
Mobile | (+994 50) 6418388 | |
Home phone | (+994 12) 5687442 | |
Fax | (+994 12) 4471456 | |
h.nuriyev@gmail.com |