Place of birth | Armenian SSR, Sisian district, p. Agudi | |
Date of birth | 06.06.1960 | |
Education | Azerbaijan (Baku) State University | |
Scientific degree | Doctor of sciences | |
Title | associate professor | |
Topic of PhD thesis:
- specialty code - specialty name - topic name |
01.04.10 Semiconductors and dielectrics The electrical and optical properties of a solid solution of Ge-Si (Ge1-xSiix:H) |
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Topic of doctoral thesis:
- specialty code - specialty name - topic name |
2211.01 Solid State Physics Electron, optical processes in hydrogenated thin films on the basis of silicon-germanium and their application perspectivite |
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Total number of printed scientific publications:
- number of scientific publications printed abroad: - number of papers published in journals indexed and abstracted in international databases |
105
71
24 |
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Number of patents and certificates of authorship | ||
Staff training:
- number of PhD - number of Doctor of sciences |
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Basic scientific achievements | 1. Detected hopping mechanism at low temperatures.
2. For silicon compounds identified energy hopping, hopping distance, the wave function for the local conditions and the density of states. 3. We get the expression for determining the concentration of hydrogen atoms in the silicon structures. 4. We get the structure for the manufacture of multi-layer solar cells |
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Names of scientific works | 1. Najafov B.A, Bakirov M.Y, Mamedov V.S. and Andreev A.A. Optical properties of amorphous hydrogenated amorphous a-Si0,90Ge0,10:Hx. // Phys. Stat. Solids, 1991, K 119-127.
2. Наджафов Б.А. Электрические свойства аморфных пленок твердого раствора Ge0,90Siо,10:Hх. // Физ. и Техн. Полупроводников, т. 34, в.11, 2000, c. 1383-1385. 3. Najafov B.A. Absorption, photoconductivity and current-voltage characteristics of amorphous Ge0,90Siо,10:H solid solutions. // Укр. Физ. журн., 2000, т. 45, №10, c. 1221-1224. 4. Наджафов Б.А., Исаков Г.И., Фигаров В.Р. Оптические свойства гидрогенизированных аморфных пленок твердого раствора a-Ge0,85Siо,15:H. // Прикладная физика, 2004, №4, с. 107-114. 5. Наджафов Б.А. ЭПР и ИК спектры поглошения аморфных пленок a-Sii-хGex:H. // AMEA-nın Xəbərləri, 2005, № 2, c. 139-144 6. Наджафов Б.А. Солнечные преобразователи на основе а-Si0,80Ge0,20:Hх. // Прикладная физика, 2005, с.97-102. 7. Najafov B.A. Solar cells based on a-Si0,80Ge0,20:H amorphous films. // Укр. Физ. журн., 2005, т. 50, № 5, р. 477-482. 8. Najafov B.A. and Isakov G.I. Electrical properties of amorphous Siо,60Ge0,40:Hx films. // Inorganic Materials, 2005, №7, vol. 41, p. 787-791. 9. Наджафов Б.А., Исаков Г.И. Оптические свойства аморфных пленок твердого раствора а-Si1-xGex:H c различной концентрацией водорода. // Журнал прикладной спектроскопии, 2005, т.72, № 3, c. 371-376. 10. Наджафов Б.А. ЭПР и ИК спектры поглошения аморфных пленок a-Sii-хGex:H. // AMEA-nın Xəbərləri, 2005, № 2, c. 139-144 11.Наджафов Б.А. Солнечные преобразователи на основе а-Si0,80Ge0,20:Hх. // Прикладная физика, 2005, с.97-102. Najafov B.A. Solar cells based on a-Si0,80Ge0,20:H amorphous films. // Укр. Физ. журн., 2005, т. 50, № 5, р. 477-482. 12.Najafov B.A. and Isakov G.I. Electrical properties of amorphous Siо,60Ge0,40:Hx films. // Inorganic Materials, 2005, №7, vol. 41, p. 787-791. Наджафов Б.А., Исаков Г.И. Оптические свойства аморфных пленок твердого раствора а-Si1-xGex:H c различной концентрацией водорода. // Журнал прикладной спектроскопии, 2005, т.72, № 3, c. 371-376. 13.Najafov B.A. Photovoltaic effects in a–Si0,80Ge0,10:Hx films. // Letters in International Journal for Alternativ Energy and Ecology, 2005, № 1, p. 36-38. 14.Наджафов Б.А., Исаков Г.И. Получение пленок а-Si1-хGeх:H, изменение ее параметров от состава. // ISIAEE Solar Energy, 2006, № 4, (36), p. 51-55. 15.Фиговский О.А., Наджафов Б.А., Исаков Г.И. Рост нанокристаллических структур аморфно гидрированных пленок кремния (а-Si:H). // Вестник Дома Ученых Хайфы, Специальный выпуск, Хайфа, 2008, с.14-23. 16.Najafov B.A. and Isakov G.I. Properties of аmorphous Sii-xGex:H (x=0-1) films. // Inorganic Materials, 2009, vol. 45, № 7. p. 713-718. 17.Najafov В.А., Fiqarov V.R. Hydrogen content evaluation in hydrogenated nanocrystalline silicon and its amorphous alloys with germanium and carbon. // International Journal of Hydrogen Energy, 35, 2010, р. 4361-4367. 18.Najafov B.A. and Isakov G.I. Optical and Electrical Properties of аmorphous Si1-xCx:H films. // Inorganic Materials, 2010, №,6, vol. 46, p. 624-630. |
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Membership with international and foreign scientific organizations | Corresponding Member of the Russian Academy of Natural Sciences | |
Pedagogical activity | ||
Other activities | ||
Awards and prizes | 1. Diploma "Golden Chair of Russia" of the Russian Academy of Natural Sciences
2. Order "Labore Et Scientia - difficulty and knowledge" of the Russian Academy of Natural Sciences 3. Order "Primus Inter Pares - the first among equals" of the Russian Academy of Natural Sciences 4. "Honored Worker of Science and Education" of the Russian Academy of Natural Sciences |
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Main place of work and its address | Institute of Radiation Problems of ANAS, AZ1143, B.Vahabzadeh 9, Baku, Azerbaijan | |
Position | Leading researcher | |
Office phone | (+994 12) 5383224 | |
Mobile | (+994 50) 3998966 | |
Home phone | (+994 12) 4771866 | |
Fax | ||
bnajafov@rambler.ru |