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Najafov Bakhtiyar Agagulu oglu
Place of birth Armenian SSR, Sisian district, p. Agudi
Date of birth 06.06.1960
Education Azerbaijan (Baku) State University
Scientific degree Doctor of sciences
Title associate professor
Topic of  PhD thesis:

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-         specialty name

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01.04.10

Semiconductors and dielectrics

The electrical and optical properties of a solid solution of Ge-Si (Ge1-xSiix:H)

Topic of doctoral thesis:

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-         specialty name

-         topic name

 

2211.01

Solid State Physics

Electron, optical processes in hydrogenated thin films on the basis of silicon-germanium and their application perspectivite

Total number of printed scientific publications:

-          number of scientific publications printed abroad:

-          number of papers  published in journals indexed and abstracted in international databases

105

 

71

 

24

Number of patents and certificates of authorship  
Staff training:     

-         number of  PhD

-         number of  Doctor of sciences 

 
Basic scientific achievements 1. Detected hopping mechanism at low temperatures.

2. For silicon compounds identified energy hopping, hopping distance, the wave function for the local conditions and the density of states.

3. We get the expression for determining the concentration of hydrogen atoms in the silicon structures.

4. We get the structure for the manufacture of multi-layer solar cells

Names of scientific works 1. Najafov B.A, Bakirov M.Y, Mamedov V.S. and Andreev A.A. Optical properties of amorphous hydrogenated amorphous a-Si0,90Ge0,10:Hx. // Phys. Stat. Solids, 1991, K 119-127.

2. Наджафов Б.А. Электрические свойства аморфных пленок твердого раствора Ge0,90Siо,10:Hх. // Физ. и Техн. Полупроводников, т. 34, в.11, 2000, c. 1383-1385.

3. Najafov B.A. Absorption, photoconductivity and current-voltage characteristics of amorphous Ge0,90Siо,10:H solid solutions. // Укр. Физ. журн., 2000, т. 45, №10, c. 1221-1224.

4. Наджафов Б.А., Исаков Г.И., Фигаров В.Р. Оптические свойства гидрогенизированных аморфных пленок твердого раствора a-Ge0,85Siо,15:H. // Прикладная физика, 2004, №4, с. 107-114.

5. Наджафов Б.А. ЭПР и ИК спектры поглошения аморфных пленок a-Sii-хGex:H. // AMEA-nın Xəbərləri, 2005, № 2, c. 139-144

6. Наджафов Б.А. Солнечные преобразователи на основе а-Si0,80Ge0,20:Hх. // Прикладная физика, 2005, с.97-102.

7. Najafov B.A. Solar cells based on a-Si0,80Ge0,20:H amorphous films. // Укр. Физ. журн., 2005, т. 50, № 5, р. 477-482.

8. Najafov B.A. and Isakov G.I. Electrical properties of amorphous Siо,60Ge0,40:Hx films. // Inorganic Materials, 2005, №7, vol. 41, p. 787-791.

9. Наджафов Б.А., Исаков Г.И. Оптические свойства аморфных пленок твердого раствора а-Si1-xGex:H c различной концентрацией водорода. // Журнал прикладной спектроскопии, 2005, т.72, № 3, c. 371-376.

10. Наджафов Б.А. ЭПР и ИК спектры поглошения аморфных пленок a-Sii-хGex:H. // AMEA-nın Xəbərləri, 2005, № 2, c. 139-144

11.Наджафов Б.А. Солнечные преобразователи на основе  а-Si0,80Ge0,20:Hх. // Прикладная физика, 2005, с.97-102. Najafov B.A. Solar cells based on a-Si0,80Ge0,20:H amorphous films. // Укр. Физ. журн., 2005, т. 50, № 5, р. 477-482.

12.Najafov B.A.  and  Isakov G.I. Electrical properties of amorphous Siо,60Ge0,40:Hx films. // Inorganic Materials, 2005, №7, vol. 41, p. 787-791. Наджафов Б.А., Исаков Г.И. Оптические свойства аморфных пленок твердого раствора а-Si1-xGex:H c различной концентрацией водорода. // Журнал прикладной спектроскопии, 2005, т.72, № 3, c. 371-376.

13.Najafov B.A. Photovoltaic effects in a–Si0,80Ge0,10:Hx films. // Letters in International Journal for Alternativ Energy and Ecology, 2005, № 1, p. 36-38.

14.Наджафов Б.А., Исаков Г.И. Получение пленок а-Si1-хGeх:H, изменение ее параметров от состава. // ISIAEE Solar Energy, 2006, № 4, (36), p. 51-55.

15.Фиговский О.А., Наджафов Б.А., Исаков Г.И. Рост нанокристаллических структур аморфно гидрированных пленок кремния (а-Si:H). // Вестник Дома Ученых Хайфы, Специальный выпуск, Хайфа, 2008, с.14-23.

16.Najafov B.A. and Isakov G.I. Properties of аmorphous  Sii-xGex:H (x=0-1) films. // Inorganic Materials, 2009, vol. 45, № 7. p. 713-718.

17.Najafov В.А., Fiqarov V.R. Hydrogen content evaluation in hydrogenated nanocrystalline silicon and its amorphous alloys with germanium and carbon. // International Journal of Hydrogen Energy, 35, 2010, р. 4361-4367.

18.Najafov B.A.  and  Isakov G.I. Optical and Electrical Properties  of  аmorphous   Si1-xCx:H films. // Inorganic Materials, 2010, №,6, vol. 46, p. 624-630.

Membership with international and foreign scientific organizations Corresponding Member of the Russian Academy of Natural Sciences
Pedagogical activity  
Other activities  
Awards and prizes 1. Diploma "Golden Chair of Russia" of the Russian Academy of Natural Sciences

2. Order "Labore Et Scientia - difficulty and knowledge" of the Russian Academy of Natural Sciences

3. Order "Primus Inter Pares - the first among equals" of the Russian Academy of Natural Sciences

4. "Honored Worker of Science and Education" of the Russian Academy of Natural Sciences

Main place of work and its address Institute of Radiation Problems of ANAS, AZ1143, B.Vahabzadeh 9, Baku, Azerbaijan
Position Leading researcher
Office phone (+994 12) 5383224 
Mobile (+994 50) 3998966
Home phone (+994 12) 4771866
Fax  
E-mail bnajafov@rambler.ru