|Phone||(+994 12) 5393218|
|Fax||(+994 12) 5395961|
|Chief||Ajdarov Husnu-Jangi Khalil oglu
Doctor of Physical and Mathematical Sciences
|Total number of employees||7|
|Basic activity directions||Growth and electronic properties of impurity-doped diamond-like semiconductors.|
|Main scientific achievements||
Special features of the electronic properties of impurity-doped Ge-Si alloy crystals due to composition and structure of different nanovolumes surrounding of the defect core have been observed.
The ground-state energy spectrum of wide range deep and shallow impurities in Ge-Si alloys has been experimentally determined.
Expressions for alloy and phonon scattering are derived for electrons and holes in Ge-Si single crystal.
Innovative techniques have been developed to grow impurity-doped alloy crystal from the melt with desired composition and impurity distribution.
Under the extreme quantum limit conditions in a longitudinal magnetic field and when impurity scattering predominates a large negative magneto resistance in III-V semi- conducting compounds is observed and interpretated.Two Ph.D theses have been carried out at the laboratory (directed to preparation and investigation of electronic properties of complexly-doped Ge-Si crystals) were published as monographs by the “Lambert Academic Publishing” house of Germany in 2013 year.