Azerbaijan National Academy of Sciences

Deep, surface-pixel phototransistor structures of avalanche-shaped photodiodes have been developed and successfully tested. At the same time, a new iterative model was developed that correctly expresses the occurrence of the carrier avalanche process in avalanche photodiodes and the influence of the volume charge region resistance, capacitance, and limit voltage on the parameters of avalanche diodes. It is determined that the gain can vary up to 2 times depending on the resistance of the volume-charge region. As this resistance decreases, the gain increases. The new model has been experimentally tested with Laser components and Zekotek photodiodes, and the correctness of the model has been confirmed experimentally. The newly developed MSFD-3NM photodiodes have a reduced operating voltage by 17%, a temperature dependence by 34%, and a dark current by a factor of 5. In addition, the gain of the new photodiode has increased by 1.8 times.

The results obtained showed that the newly developed MSFD-3NM diode surpasses the MSFD-3NK diode in most parameters and can be successfully applied in most experiments.