Azerbaijan National Academy of Science

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1. The mechanisms of radiation defect formation and welding processes of doped (Yb, Er, Gd) and primary layered GaS and GaSe single crystals, as well as resistance to gamma quanta in a wide range of temperatures, illumination and electric field strength, are determined. It is shown that radiation-stimulating processes resulting from the interaction of radiation defects formed under the cationic and anionic crystal lattices with structural and additive defects make it possible to purposefully control the electrical, optical, and photoelectric properties. layered crystals and the creation of effective photodetectors and photoconverters on their basis.

2. It has been determined that the photoconductivity of layered GaS (Yb, Sm) crystals in the absorption band is caused by the regulation of the non-smooth potential of the energy levels of the surface under the influence of an external electric field. The degree of smoothing of the surface potential depends on the radiation dose, the concentration of the additive atoms and the value and direction of the external field.

3. Layered GaS:Yb The uneven distribution of defects on the surface of the single crystal with dimensions ~ 30-40 nm and periodicity ~ 16 nm depends on the radiation dose and the degree of impurity with charged particles and gamma quanta. As the radiation dose and the concentration of the additive atoms increase, the amount of roughness decreases exponentially.