Phone | (99412) 539 33 91 | |
Fax | (+994 12) 5398318 | |
o.samedov@rambler.ru | ||
Chief |
Corresponding member of ANAS Samadov Ogtay Abil oglu |
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Total number of employees | 15 | |
Basic activity directions | Ionizing radiation influence on dielectric and electric relaxation, impedance spectrum and phase transition of crystals as TlInS2 and TlGaSe2 | |
Main scientific achievements |
1. It has been determined that, there are anomalies at temperature dependences of dielectric permittivity and loss angle tangent at the temperatures higher than 300K (paraelectric phase) in TlGaSe2 crystal (T=415K and T=532K). 2. It has been shown that, TlGaSe2 crystal (Z٭(f)) has an ionic conductivity at 415K-532K temperatures. Complex impedance and complex dielectric spectrum of TlGaSe2 crystal have been studied at 100-550K temperatures and 102-106 Hz frequency range. (Z″−Z′) complex plane diagrams have been analyzed by using equivalent circuit of substitution method and the border of frequency range has been defined for all temperatures. 3. It has been determined that, the border of high frequency range of TlGaSe2 crystal, irradiated with gamma quanta at 20Mrad dose in complex plane diagram, shifted towards the frequency decrease and two gadogramma have been observed in (Z″−Z′) complex plane diagrams. The mechanism of conductivity has been defined in both irradiated and non-irradiated TlGaSe2 crystal (electron and ion at high temperatures). The types of polarization are electron and ion-relaxation. |