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"The practice of searching for critical points of a semiconductor from ellipsometric measurements" monograph published
06.03.2018 08:45
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"The practice of searching for critical points of a semiconductor from ellipsometric measurements" monograph published

"The practice of searching for critical points of a semiconductor from ellipsometric measurements" monograph by head of the Laboratory of Physical Research of the Institute of Natural Resources of the Nakhchivan Division  of ANAS, Ph.D. in Physics, Associate Professor Mammad Huseynaliev was published.

The monograph presents the theoretical foundations of spectroscopic ellipsometry, the calculation of percentages of the thickness of a thin layer, the optical constants of a material, components on a surface and an intermediate layer, as well as questions related to the analysis of its composition in a semiconductor mixture (in a solid solution).

 New edition, for the first time, using the "Graphical Analysis" program, the search for critical material points has been implemented, and the methodology for doing this work is described in detail in the case of thin films and PbS single crystals.

The monograph is intended for the scientific community and researchers interested in the topic.

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