Azerbaijan National Academy of Science

The paper dubbed “Free-Electron Screening Mechanism of the Shallow Impurity Breakdown in n-GaAs: Evidences from the Photoelectric Zeeman and Cyclotron Resonance Spectroscopies” by laboratory heads of the Institute of Physics – academician Anvar Nahmadov and PhD in Physics Ogtay Alakbarov, on the “Journal of Spectroscopy” with high impact factor of the publishing “Hindawi” of England.

A novel breakdown (BD) mechanism of shallow impurity (SI) under the electric field at low temperatures is suggested for samples with the donor concentrations and the compensation degree with acceptors of concentration in the external magnetic fields up to, oriented parallel or perpendicular to the external electric field. Diagnosis of the BD mechanism was performed by SI Zeeman (mainly from the ground state to and other excitation states) and cyclotron resonance photoelectric spectroscopy (PES) methods in the wide interval of the electric field including the BD region too.

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